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Publikationen vor 2000

     
   
Diplomarbeiten                    Dissertationen


Epitaxie     GaN     Spektroskopie     CIS     Nanoteilchen     Sputtern     ZnO     Kristallzüchtung









Epitaxie
M. Topf, G. Steude, S. Fischer, W.Kriegseis, I. Dirnstorfer, D. Meister, B.K. Meyer
Low-pressure chemical vapor deposition of GaN epitaxial films
J. Cryst. Growth 189-190, 330-334 (1998)
S. Fischer, C. Wetzel, W. L. Hansen, E.D. Bourret-Courchesne, B.K. Meyer, E.E. Haller
Properties of GaN grown at high rates on sapphire and on 6H-SiC
Appl. Phys. Lett. 69, 2716 (1996)
A. Zeuner, H. Alves, D. M. Hofmann, B. K. Meyer, M. Heuken, J. Bläsing,  A. Krost
Structural and optical properties of epitaxial and bulk ZnO
Appl. Phys. Lett. 80 (12), 2078

        
GaN

C. Wetzel, J.W. Ager III, M. Topf, B.K. Meyer, H. Amano, I. Akasaki
Correlation of vibrational modes and DX-like centers in GaN:O
Physica B 273-274, 109-112 (1999)

H. Witte, A. Krtschil, M. Lisker, J.Christen, M. Topf, D. Meister, B.K. Meyer
Interface and Bulk Defects in SiC/GaN Heterostructures Characterized Using Thermal
Admittance Spectroscopy
Appl. Phys. Lett. 74, 1424 (1999)
G. Steude, T. Christmann, B.K. Meyer, A. Goeldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano and I. Akasaki
Optical investigations of AlGaN on GaN Epitaxial Films
Appl. Phys. Lett. 74, 2456 (1999)

G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano, 
I. Akasaki
Strain modification of GaN in AlGaN/GaN epitaxial films
Jpn. J. Appl. Phys. 38, L 498, (1999)
D.M. Hofmann, B.K. Meyer, F. Leiter, W. von Förster, H. Alves, N. Romanov, H. Amano and I. Akasaki
Optical transitions of the Mg acceptor in GaN
Jap. J. Appl. Phys.Vol. 38, 1422-1424 (1999)

D. Meister, M. Topf, I. Dirnstorfer, B.K. Meyer, R. Schwarz and M. Heuken
Photoconductivity in AlxGa1-xN with different Al contents
Phys. stat. sol. (b) 216, 749 (1999)
ICNS, Montpellier, July 5.-9., 1999
B.K. Meyer, G. Steude, A. Goeldner,A. Hoffmann, H. Amano and I. Akasaki
Photoluminescence investigations of AlGaN on GaN epitaxial films
Phys. stat. sol. (b) 216, 187 (1999)
ICNS 3, Montpellier, July 5.-9., 1999
A.V. Rodina, L. Eckey, M. Dietrich, A. Göldner, Al.L.Efros, M. Rosen,  A. Hoffmann and B.K. Meyer
Exciton energy structure in wurtzite GaN
Phys. Stat. Sol. 216, 21 (1999)
ICNS 3, Montpellier, July 5.-9., 1999
Phys. Rev. B 6411 (2001)
       
D. M. Hofmann, W. Burkhardt, F. Leiter, W. v. Förster, H.Alves, A. Hofstaetter, B. K. Meyer, N. G. Romanov, H. Amano, I. Akasaki
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
Physica B 273-274, 43 (1999)
20th ICDS, Berkeley, July 26.- 30., 1999
D. J. As. T. Simonsmeier, B. Schöttker, T. Frey, D. Schikora, W. Kriegseis, W. Burkhardt, B.K. Meyer
Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy
Appl. Phys. Lett. Vol. 73 1835 (1998)

M. Topf, D. Meister, I. Dirnstorfer, G. Steude, S. Fischer, B.K. Meyer, A. Krtschil, H. Witte, J. Christen, T.U. Kampen, W. Mönch
Electrical and optical properties of p-SiC/n-GaN heterostructures
Mat. Sci. & Engin. B 74, 302 (1998)
R. Zimmermann, M.R. Hofmann, A. Euteneuer, J. Möbius, D. Weber, W.W. Rühle,
E. O. Göbel, B.K. Meyer, H. Amano, I. Akasaki
Quantum beat spectroscopy on excitons in GaN
Mat. Sci. & Engin. B 74,  (1998)
S. Fischer, G. Steude, D.M. Hofmann, F. Kurth, F. Anders, M. Topf, B.K. Meyer,
F. Bertram, M. Schmidt, J. Christen, L. Eckey, J. Holst, A.Hoffmann, B. Mensching, B.Rauschenbach
On the nature of the 3.41 eV luminescence in hexagonal GaN
J. Cryst. Growth 189-190, 556-560 (1998) 

D.M. Hofmann, B.K. Meyer, H. Amano, I. Akasaki
The Dependence of the Band Gap on Alloy Composition in Strained AlGAN on GaN
Phys. stat. sol. (b) 205, R7 (1998)
G. Steude, D.M. Hofmann, B.K. Meyer, H. Amano, I. Akasaki
The Residual Donor Binding Energy in AlGaN Epitaxial Layers
Phys. stat. sol. (a), 165, R3 (1998)
U. Strauß, H. Tews, H. Riechert, R. Averbeck, M. Schienle,  B. Jobst, D. Volm, T. Streibl, B.K. Meyer, W.W. Rühle
Indentification of a cubic phase in epitaxial layers of predominantly hexagonal GaN
MRS, Internet Journal, Nitride Semiconductor Research, Volume 1, Article  44, 1997


        
Spektroskopie
         
B.K. Meyer
Magnetic Resonance Investigations on Group III-Nitrides
Semiconductors and Semimetals, Vol 57 (1999)
D. M. Hofmann, B. K. Meyer, F. Leiter, W. v. Förster, H. Alves,  N. Romanov, H. Amano, and I. Akasaki
Optical transitions of Mg acceptors in GaN
Jap. Appl. Phys. Lett. 38, 1422 (1999)
B. K. Meyer, D. M. Hofmann, D. Volm, W. M. Chen, N. T. Son, and E. Janzen
Bandstructure and transport properties of 4H- and 6H-SiC: Optically detected cyclotron reso-nance investigations
Int. Conf. on SiC and related Materials, Transtech, 1999
         
D. M. Hofmann, W. Burkhardt, F. Leiter, W. Förster, H. Alves, A. Hofstaetter, K. Meyer, N. G. Romanov, H. Amano, and I. Akasaki
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
Physica 43 B 273-274, (1999)
G. Steude, D.M. Hofmann, B. K. Meyer, H. Hardtdegen, and M. Hollfelder
Transport Investigations on high purity MOVPE grown GaAs
Phys. stat. sol (b) 216, 1039 (1999)
A. Hofstaetter, H. Alvez, M. Böhm, D. M. Hofmann, O. V. Kondratiev, M. V. Korzik, V.V. Laguta, M. Luh, V. Metag, and B. K. Meyer
Spectroscopic characterization of defects in tungstate scintillators
Proc. of the 5th Int. Conf. on Inorganic Scintillators and their Applications 
(Ed. V. Mikhailin, Moscow, Lomonosov Moskov State Univ.) p.128 (1999)
V.A. Nadolinny,-A.P. Yelisseyev, J.M. Baker, D.J. Twitchen, M.E. Newton, A. Hofstaetter, and B. Feigelson
A novel use of hyperfine structure in the electron paramagnetic resonance of interacting pairs of paramagnetic defects in diamond
Hyperfine-Interactions. 121, 341 (1999)
M. Boehm, F. Henecker, A. Hofstaetter, M. Luh, B.K. Meyer, A. Scharmann. O.V. Kondra-tiev, and M.V. Korzhik
Electron traps in the scintillator material PbWO4 and their correlation to thermally stimulated luminescence
Radiation Effects & Defects in Solids 150, 21 (1999)
V.A. Nadolinny, A.P. Yelisseyev, J.M. Baker, D.J. Twitchen, M.E. Newton, A. Hofstaetter, and B. Feigelson
EPR spectra of separated pairs of substitutional nitrogen atoms in diamond with a high con-centration of nitrogen
Phys.-Rev. B-60, 5392 (1999)
V.A. Nadolinny, A.P. Yelisseyev, A.G. Badalyan, J.M. Baker, D.J. Twitchen, M.E. Newton, A. Hofstaetter, and B. Feigelson
New EPR spectra in diamonds with a high concentration of nitrogen atoms
Diamond-and-related-materials 8, 1565 (1999)
D. M. Hofmann, A. Hofstaetter, B. K. Meyer, N. G. Romanov, A. I. Ekimov, T. Gacoin G. Couinio, and J. P. Biolot
Optical and magnetic resonance investigations on Mn doped CdS nanocrystals, 7th inter. Sym-posium on Nanostructures:
Physics and Technology Ioffe Institute 1999, St. Petersburg, Russia, p.34 (1999)
B.K. Meyer, A. Hoffmann, P. Thurian
Defect spectroscopy in the nitrides
Group III Nitride, Semiconductor Compunds Physics and Applications
Oxford Science Publications, p 242-306, 1998 

D. M. Hofmann, A. Hofstaetter, U. Leib, B. K. Meyer, and G. Counio
EPR and ENDOR investigation on CdS:Mn nanocrystals
Journ. of Cryst. Growth, 184, 383 (1998)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, N. M. Reinacher, M. Stutzmann, D. M. Hof-mann,Y. Mochizuki, and M. Mizuta
Recombination centers in GaAs/AlGaAs heterostructures investigated by optically and elec-trically detected magnetic resonance
Phys. Rev, B 58, 4892 (1998) 
M. Böhm, A. E. Borisevich, G. Yu. Drobychev, A. Hofstaetter, O. V. Kondratiev, M. V. Korzhik, M. Luh,
B. K. Meyer, J. P. Peigneux, and A. Scharmann
Influence of Mo impurity on the spectroscopic and scintillation properties of PbWO4 crystals
Phys. stat. sol. (a) 167, 243 (1998)
M. Böhm, F. Henecker, A. Hofstaetter, M. Luh, B. K. Meyer, A. Scharmann, V. Metag, R. Novotny, O. V. Kondratiev, and M. V. Korzhik
Shallow electron traps in the scintillator material PbWO4 and their correlation to thermally stimulated luminescence, in tungstate crystals
Proc. Intern. Workshop on Tungstate Crystals (Eds. S. Baccaro, B. Borgia, I. Dafinei, E. Longo), p. 141, (1998)
A. Watterich, A. Hofstaetter, R. Wuerz, A. Scharmann, and O.R. Gilliam
Mo5+-H and W5+-H centres in ZnWO4 single crystals characterized by ESR and ENDOR spectroscopy
J. Phys.: Condens. Matter 10, 205 (1998)
A. Watterich, A. Hofstaetter
O- -LiZn Centers in Li-doped ZnWO4 single crystals characterized by ESR and ENDOR spec-troscopy
Sol. St. Commun. 105, 357 (1998)
A. Hofstaetter, B.K. Meyer, A. Scharmann, P.G. Baranov, I.V. Ilyin, and E.N. Mokhov
X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide, Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum 264-268 (Eds. G. Pensl, H. Morkoç, B. Monemar,E. Janzén; Trans Tech Publications Switzerland), p. 595 (1998)
B.K. Meyer, A. Hofstaetter, and P.G. Baranov
On the identification of an AlrRelated deep centre in 4H-SiC - self-compensation in SiC?, Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum 264-268 (Eds. G. Pensl, H. Morkoç, B. Monemar, E. Janzén; Trans Tech Publications Switzerland), p. 591 (1998)
B.K. Meyer, A. Hofstaetter, U. Leib, and D.M. Hofmann
The temperature dependence of the electron g-factor in CdTe
J. Crystal Growth, 1118, 184/185 (1998)
P. G. Baranov, N. G. Romanov, A. Hofstaetter, B. K. Meyer, A. Scharmann, W. von Foerster, F.-J. Ahlers, and K. Pierz
Dynamic properties of excitons in GaAs/AlAs superlattices from optically detected magnetic resonance and level anticrossing
Proceedings 6th International Symposium "Nanostructures: Physics and Technology"
Sankt Petersburg (Russia) 22. - 26. June
(eds. Zh.Alferov, L. Esaki;Inform. Services and Publish-ing Dept., A.F. Ioffe-Institute, Sankt Petersburg , Russia), 366 (1998)
V. Nadolinny, A. Yelisseyev, O. Yurjeva, A. Hofstaetter, B.K. Meyer, and B. Feigelson
Relationship between electronic states of nickel-containing centres and donor nitrogen in syn-thetic and natural diamonds
Diamond-and-related-materials 7, 1558 (1998)
F.H. Leiter, D.M. Hofmann, A. Hofstaetter, B.K. Meyer, and S.I. Nikitin
Optically detected magnetic resonance on Cr3+ centres in KZnF3
Solid State Commun. 108, 625 (1998)
G. Corradi, I.M. Zaritskii, A. Hofstaetter, K. Polgar, and L.G. Rakitina
Ti3+ on Nb site: A paramagnetic Jahn-Teller center in vacuum-reduced LiNbO3:Mg:Ti single crystals
Phys. Rev. B 58, 8329 (1998)
Mt. Wagner, I. Dirnsdorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer
Characterization of CuIn(Ga)Se2-thin films: I. Cu-rich layers
phys. stat. sol. (a) 167, 131 (1998)
I. Dirnsdorfer, Mt. Wagner, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer
Characterization of CuIn(Ga)Se2-thin films: II. Magneto-optical properties of Cu- and In-rich layers
phys. stat. sol. (a) 168, 153 (1998)
Mt. Wagner, I. Dirnsdorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer
Characterization of CuIn(Ga)Se2-thin films: Part C: In-rich layers
phys. stat. sol. (a) 168, 163 (1998)
S. Fischer, G. Steude, D. M. Hofmann, F. Kurth, F. Anders, M. Topf, and B. K. Meyer
On the nature of the 3.41 eV luminescence in hexagonal GaN
J. Cryst. Growth 189/190, 556 (1998)
M. Fiederle, C. Eiche, M. Salk, R. Schwarz, K. W. Benz, W. Stadler, D.M. Hofmann, and B. K. Meyer
Modified compensation model of CdTe
J. Appl. Phys. 84, 6689 (1998)
G. Steude, D. M. Hofmann, B. K. Meyer, H. Amano, and I. Akasaki
The residual donor binding energy in AlGaN epitaxial layers
phys. stat. sol. (b) 165, R3 (1998)
G. Steude, D. M. Hofmann, B. K. Meyer, H. Amano, and I. Akasaki
Dependence of the bandgap on alloy composition in strained AlGaN on GaN
phys. stat. sol. (b) 205, R 7 (1998) 
C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fischer, B.K. Meyer,
R.J. Molnar, P. Perlin
Pressure Induced Deep Gap State of Oxygen in GaN
Phys. Rev. Lett. 78, 3923 (1997)
D. M. Hofmann, K. Oettinger, Al. L. Efros, and B. K. Meyer
Magnetic.circular dichroism study of heavy- and light-hole g-factors in InxGa1-xAs/InP
Phys. Rev. B 55, 9924 (1997)
B. K. Meyer, Mt. Wagner, I. Dirnsdorfer, D. M. Hofmann, and F. Karg
Magnetooptical characterization of CuIn(Ga)Se2, 19th Inter
Conf. on Defects in Semicond., Aveiro, Portugal (1997)
D. M. Hofmann, D. Volm, B. K. Meyer, N. T. Son W. M. Chen, O. Kordina, A. O. Konstan-tinov, B. Monemar, and E. Janzen
Mechanism of optically detected cyclotron resonance in SiC
J. Appl. Phys. 81, 1929 (1997)
B. K. Meyer and D. M. Hofmann
Cyclotron resonance and hot electron effects in II-VI semiconductors
phys. stat. sol. (b) 202, 83 (1997)
I. Dirnsdorfer, Mt. Wagner, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer
CuIn(Ga)Se2 solar cells: Characterization of the absorber material
Int. Conf. on Ternary and Multitern. Compounds, Salford 1997
N. T. Son, E. Sörman, W.M. Chen, J. P. Bergman, C. Hallin, O. Kordina, O. Konstantinov, B. Monemar,
D. M. Hofmann, D. Volm, and B. K. Meyer
Mechanism of optical detection of cyclotron resonance in SiC
Inst. Phys. Conf. Ser. 142, 353 (1997)
B. K. Meyer, A. Hofstaetter, U. Leib, and D. M. Hofmann
The temperature dependence of the electron g-factor in CdTe
Journ. of Cryst. Growth, 184, 1118 (1997)
T. Monteiro, E. Pereira, M. R. Correia, C. Xavier, D. M. Hofmann, B. K. Meyer, S. Fischer, A. Cremades, and J. Piqueras
Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
J. of Lum. 72, 696 (1997)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, M. Stutzmann, D. M. Hofmann, Y.Mochizuki, and M. Mizuta
Gallium interstitials in AlGaAs/GaAs heterostructures
19th Inter, Conf. on Defects in Semicond., Aveiro, Portugal (1997)
P. G. Baranov, N. G. Romanov, A. Hofstaetter, A. Scharmann, C. Schnorr,  F.J. Ahlers, and K. Pierz
Application of ODMR and level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices
Inst. Phys. Conf. Ser. No 155 (IOP Publishing Ltd), p. 893 (1997)
T. Wimbauer, B.K. Meyer, A. Hofstaetter, A. Scharmann, and H. Overhof
Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment
Phys. Rev. B56, 7384 (1997)
B.K. Meyer, U. Leib, A. Hofstaetter, C. Krummel, and D. Kohl
Defects spectroscopy in Ga2O3, Proc. 19th International Conference on Defects in Semicon-ductors (ICDS-19)
Materials Science Forum 258 - 263 (Eds. G. Davies and M.H. Nazaré; Trans Tech Publica-tions Switzerland), p. 1473 (1997)
W. M. Chen, N. T. Son, E. Janzen, D. M. Hofmann, and B. K. Meyer
Effective masses in SiC determined by cyclotron resonance experiments
phys. stat. sol. (a) 162, 79 (1997)
A. Hofmann, L. Eckey, P. Maxim, J.-Ch. Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Steude, D. Volm, B. K. Meyer,
T. Detchprom, K. Hiramatsu, H. Amano and I. Akasaki
Dynamical study of the yellow luminescence band in GaN
Solid State Electronics 41, 275 (1997)
D. M. Hofmann, W. Stadler, P. Christmann, and B.K. Meyer
Defects in CdTe and Cd1-xZnxTe
Nuclear. Inst. and Methods, A 380, 117 (1996)
D. M. Hofmann, D. Volm, W. Stadler, B. K. Meyer, W. Taudt, J. Söllner, and M. Heuken
Optically detected cyclotron resonance investigation of epitaxially grown ZnSe
J. Crystal Growth 159, 410 (1996)
D. M. Hofmann, D. Volm, B. K. Meyer, N. T. Son W. M. Chen, O. Kordina, A. O. Konstan-tinov, B. Monemar, and E. Janzen
Optically detected cyclotron resonance investigations on 4H SiC
Inst. Phys. Conf. Ser. 142, 353 (1996)
M. Bork, R. Hoppe, A. Hofstaetter, A. Scharmann, F. E. Wagner
Ein grünes, paramagnetisches Goldfluorid - Sn1-xAuxF4 ?
Z. anorg. allg. Chem. 622, 1721 (1996)
A. Hofstaetter, A. Scharmann, S. Scheib
ESR and ENDOR investigations on the X-ray storage phosphors BaSO4 and SrSO4
Appl. Radiation and Isotopes 47, 1579 (1996)
A. Watterich, A. Hofstaetter, R. Wuerz, A. Scharmann
Ti3+ centres in reduced ZnWO4:Ti single crystals
Solid State Commun. 100, 513 (1996)
J. Simon, J. Banys, J. Hoentsch, G. Völkel, R. Böttcher, A. Hofstaetter, A. Scharmann
Indications of a ferroelastic phase transition in CaMoO4 from pulsed electron paramagnetic resonance and dielectric studies
J. Phys.: Condens. Matter 8, L359 (1996)
P. G. Baranov, E. N. Mokhov, A. Hofstaetter, A. Scharmann
Electron-nuclear double resonance of deep boron acceptors in silicon carbide
JETP Letters 64, 848 (1996)
P. G. Baranov, N. G. Romanov, A. Hofstaetter, A. Scharmann, C. Schnorr, F.-J. Ahlers, K. Pierz
Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices:
Optically detected magnetic resonance and level anticrossing
JETP Letters 63, 754 (1996)
D. M. Hofmann, W. Stadler, P. Christmann, and B.K. Meyer
Defects in CdTe and Cd1-xZnxTe
Nuclear. Inst. and Methods, A 380, 117 (1996)
D. M. Hofmann, D. Volm, W. Stadler, B. K. Meyer, W. Taudt, J. Söllner, and M. Heuken
Optically detected cyclotron resonance investigation of epitaxially grown          ZnSe
J. Crystal Growth 159, 410 (1996)
A.Hoffmann, D.Wiesmann, I.Loa, R.Heitz, I.Broser, L.Worschech, E.Kurtz, D.Hommel, G.Landwehr, D.M.Hofmann, B.K.Meyer
Strain dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
Journ. of Cryst. Growth, 159, 302 (1996)
B. Kowalski, P. Omling, B. K. Meyer, D. M. Hofmann, V. Härle, F. Scholz, and P. Sobko-wicz
Optically detekted spin resonance of conduction band electrons in InxGa1-xAs/InP quantum wells
Semicond. Scie. Techno. 11, 1416 (1996)
P. Christmann, J. Kreissl, D. M. Hofmann, B. K. Meyer, R. Schwarz, K. W. Benz
Vanadium in CdTe
J. Crystal Growth 161, 259 (1996)
A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B. K. Meyer,  D.M. Hofmann, and S. Fischer
Cathodoluminescence study of GaN epitaxial layers
Mat. Sci. Eng. B 42, 230 (1996)
D. Volm, B. K. Meyer, D. M. Hofmann, W. M. Chen, N. T. Son, C. Persson, U. Lindefelt,
O. Kordina, E. Sörmann, A. O. Konstantinov, B. Monemar, and E. Janzen
Determination of the effective mass tensor in 4H SiC
Phys. Rev. B 53, 15409 (1996)
M. Drechsler, G. Steude, D. M. Hofmann, and B. K. Meyer, D. Hommel and  P. Ruppert 
High mobility MBE grown ZnSe on GaAs
Appl. Phys. Lett. 71, 1116 (1996)
M. Drechsler, D. M. Hofmann and B. K. Meyer
An optically detected cyclotron resonance study of spin-splitting and hot electron effects in II-VI semiconductors
23rd. Int. Conf. on the Physics of Semicond. (ed. M. Scheffler and R. Zimmermann) World Scientific Publ., p.261 (1996)
D. M. Hofmann, D. Volm, B. K. Meyer, W. M. Chen, N. T. Son, C. Person, Lindefelt, O. Kordina, E. Sörmann,
A. O. Kostantinov, B. Monemar and E. Janzen
Conduction band structure of 4H-SiC, 23rd. Int. Conf. on the Physics of  Semicond. (ed. M. Scheffler and R. Zimmermann)
World Scientific Publ., p.111 (1996)
A.Hoffmann, D.Wiesmann, I.Loa, R.Heitz, I.Broser, L.Worschech, E.Kurtz, D.Hommel, G.Landwehr, D.M.Hofmann, B.K.Meyer
Strain dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
Journ. of Cryst. Growth, 159, 302 (1996)
B. Kowalski, P. Omling, B. K. Meyer, D. M. Hofmann, V. Härle, F. Scholz, and P. Sobko-wicz
Optically detekted spin resonance of conduction band electrons in InxGa1-xAs/InP quantum wells
Semicond. Sci. Techno. 11, 1416 (1996)
P. Christmann, J. Kreissl, D. M. Hofmann, B. K. Meyer, R. Schwarz, K. W. Benz
Vanadium in CdTe
J. Crystal Growth 161, 259 (1996)
A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B. K. Meyer, D.M. Hofmann, and S. Fischer
Cathodoluminescence study of GaN epitaxial layers
Mat. Sci. Eng. B 42, 230 (1996)
D. Volm, B. K. Meyer, D. M. Hofmann, W. M. Chen, N. T. Son, C. Persson,U. Lindefelt, O. Kordina,
E. Sörmann, A. O. Konstantinov, B. Monemar,  and E. Janzen
Determination of the effective mass tensor in 4H SiC
Phys. Rev. B 53, 15409 (1996)
M. Drechsler, G. Steude, D. M. Hofmann, and B. K. Meyer, D. Hommel and  P. Ruppert 
High mobility MBE grown ZnSe on GaAs
Appl. Phys. Lett. 71, 1116 (1996)
M. Drechsler, D. M. Hofmann and B. K. Meyer
An optically detected cyclotron resonance study of spin-splitting and hot electron effects in II-VI semiconductors
23rd. Int. Conf. on the Physics of Semicond. (ed. M. Scheffler and R. Zimmermann) World Scientific Publ., p.261 (1996)
D. M: Hofmann, D. Volm, B. K. Meyer, W. M. Chen, N. T. Son, C. Person, Lindefelt, O. Kordina, E. Sörmann,
A. O. Kostantinov, B. Monemar and E. Janzen
Conduction band structure of 4H-SiC
23rd. Int. Conf. on the Physics of Semicond. (ed. M. Scheffler and R. Zimmermann) World Scientific Publ., p.111 (1996)
D. M. Hofmann, D. Kovalev, G. Steude, D. Volm, B. K. Meyer, C. Xavier, and T. Monteiro
2,2 eV Luminescence in GaNGallium nitride and related materials
1st Int. Symposium, Mat. Res. Soc. Symp. Proc. 395, 619 (1996)
G. Steude, D. M. Hofmann, M. Drechsler, B. K. Meyer, H. Hardtdegen, and M. Hollfelder
Residual impurities and transport properties of high purity MOVPE GaAs
MRS, Vol. 442, 339 (1996)
T. Wimbauer, D. M. Hofmann, B. K. Meyer, M. S. Brandt, T. Brandt, M. W. Bayerl, M. Rei-nacher, M. Stutzmann,
Y. Mochizuki, and M. Mizuta
Electrically detected magnetic resonance on GaAs/AlGaAs Heterostructures
MRS, Vol 442, (1996)
          
CIS

I. Dirnstorfer, D.M. Hofmann, D. Meister and B.K. Meyer
Postgrowth thermal treatment of CuIn (Ga)Se2 : Characterization of doping levels in In- rich thin films
J. Appl. Phys., Vol. 85, No 3, 1-6, (1999)
F. Börner, J. Gebauer, S. Eichler, R. Krause-Rehberg, I. Dirnstorfer, B.K. Meyer, F. Karg
Defects in CuIn(Ga) Se2 solar cell material characterized by positron annihilation: post- growth annealing effects
Physica B 273-274 , 930 (1999)
20th ICDS, Berkeley, USA, July 26.- 30, (1999)
A. Polity, R. Krause-Rehberg, T.E.M. Staab, M.J. Puska, J. Klais, H.J. Möller, B.K. Meyer
Study of defects in as-grown and electron irradiated CuInSe2 by positron lifetime spectroscopy
J. Appl. Phys. 83 (1) 1. January (1998)
I. Dirnstorfer, Mt. Wagner, D.M. Hofmann, M.D. Lampert, F. Karg, B.K. Meyer
CuIn(Ga)Se2 solar cells: Characterization of the absorber material
Int. Conf. Ternary and Multitern. Compounds, Salford 1997
Int. Phys. Vonf. Ser. 152, 233-236 (1998)
Mt. Wagner, I. Dirnstorfer, D.M. Hofmann, B.K. Meyer, M.D. Lampert,  F. Karg
Characterization of CuIn(Ga)Se2-thin films (I.) Cu-Rich Layers
Phys. Stat. sol. (a) 167, 131 (1998)
I. Dirnstorfer, MT. Wagner, D.M. Hofmann, M.D. Lampert, F. Karg, B.K. Meyer
Characterization of CuIN (GaN)Se2 Thin Films - III. In-Rich Layers
Phys. stat. sol. (a) 168, 163 (1998)
M.T. Wagner, D.M. Hofmann, I. Dirnstorfer, M.D. Lampert, F. Karg, B.K. Meyer
Characerization of CuIn (Ga) Se2 Thin Films - II. Magneto-Optical Properties of Cu- and In-Rich Layers
Phys. stat. sol. (a) 168 ,153 (1998)
 
Nanoteilchen
D.M. Hofmann, A. Hofstaetter, F. Henecker, B.K. Meyer, N.G. Romanov, A.I. Ekimov, T. Gacoin, G. Counio, J.P. Biolot
Optical and magnetic resonance investigations on Mn doped CdS nanocrystals
Symp. St. Petersburg 1999
D.M. Hofmann, B.K. Meyer, G. Counio, T. Gacoin, J.P. Boilot, A.I. Ekimov, Al. Efros, M. Rosen
Giant Splitting of Exciton spin sublevels in Mn-doped CdS Quantum dots
MRS, Boston 1998
D.M. Hofmann, A. Hofstaetter, U. Leib, B.K. Meyer, G. Counio EPR and ENDOR Investigations on CdS.
Mn Nanocrystals
II-IC Conference 1997, Grenoble
J. Cryst. Growth 184-185, 383-387 (1998)
         
Sputtern
Y.B. He, A. Polity, H.R. Alves, W. Kriegseis, B.K. Meyer, M. Hardt
Structural and optical characterization of RF reactively sputtered CuInS2 thin films
Proceedings of the E-MRS
Thin Solid Films 62-65, 403-404 (2002)
Y. B. He, T. Krämer, I. Österreicher, A. Polity, R. Gregor, W. Kriegseis, D. Hasselkamp and B. K. Meyer
Highly (112)-oriented CuInSe2 films deposited by a one-stage RF reactive sputering process
Jpn. J. of Appl. Phys. 41, 2484-2486 (2002)
W. Burkhardt, T. Christmann, S. Franke, W. Kriegseis, D. Meister,  B.K. Meyer, W. Niessner, D. Schalch, A. Scharmann
Tungsten and fluorine co-doping of VO2 films
Thin Solid Films 402, 226-231 (2002)
Y. B. He, A. Polity, I. Österreicher, D. Pfisterer, R. Gregor, B.K. Meyer, M. Hardt
Hall effect and surface characterization of CuS and CuS films deposited by RF reactive sputtering
Physica B 308-310 , 1069-1073 (2001)
Y. B. He, A. Polity, R. Gregor, D. Pfisterer, I. Österreicher,  D. Hasselkamp, B.K. Meyer
Characterization of RF reactively sputtered Cu-In-S thin films
Physica B 308-310 1074-1077 (2001)
A. Klöppel, W. Kriegseis, B.K. Meyer, A.Scharmann, C. Daube, J. Stollenwerk, J. Trube
Dependence of the electrical and optical behaviour of ITO-silver-ITO multilayers  on the silver properties
Thin Solid Films 365, 139-146 (2000)
W. Burkhardt, T. Christmann, B.K. Meyer, W. Niessner, D. Schalch, A. Scharmann
W- and F-doped VO2 films studied by photoelectron spectrometry
Thin solid films, 345 229-235 (1999)
ZnO

Kristallzüchtung
D. Schwabe and S. Frank 
"Particle Accumulation Structures (PAS) in the Toroidal Thermocapillary Vortex of a Floating Zone - 
Model for a Step in Planet Formation?" 
Adv. Space Res. 23,(7) 1191-1196 (1999)